The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Feb. 06, 2007
Mutsuko Hatano, Kokubunji, JP;
Shinya Yamaguchi, Mitaka, JP;
Takeo Shiba, Kodaira, JP;
Mitsuharu Tai, Kokubunji, JP;
Hajime Akimoto, Ome, JP;
Mutsuko Hatano, Kokubunji, JP;
Shinya Yamaguchi, Mitaka, JP;
Takeo Shiba, Kodaira, JP;
Mitsuharu Tai, Kokubunji, JP;
Hajime Akimoto, Ome, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DARprovided on the periphery of the pixel region PAR of the active matrix substrate SUBcomposing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.