The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Jul. 20, 2006
Jia-chong Ho, Taipei Hsien, TW;
Jen-hao Lee, Taichung, TW;
Cheng-chung Lee, Taitung, TW;
Yu-wu Wang, Hsinchu Hsien, TW;
Chun-tao Lee, Hsinchu, TW;
Pzng Lin, Hsinchu, TW;
Jia-Chong Ho, Taipei Hsien, TW;
Jen-Hao Lee, Taichung, TW;
Cheng-Chung Lee, Taitung, TW;
Yu-Wu Wang, Hsinchu Hsien, TW;
Chun-Tao Lee, Hsinchu, TW;
Pzng Lin, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.