The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Dec. 07, 2007
Dong-woo Shin, Ichon-shi, KR;
Hyung-bok Choi, Ichon-shi, KR;
Jong-min Lee, Ichon-shi, KR;
Jin-woong Kim, Ichon-shi, KR;
Dong-Woo Shin, Ichon-shi, KR;
Hyung-Bok Choi, Ichon-shi, KR;
Jong-Min Lee, Ichon-shi, KR;
Jin-Woong Kim, Ichon-shi, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from locally agglomerating; forming an impurity undoped second amorphous silicon layer on the first amorphous silicon layer in an in-situ condition; forming a storage node by patterning the first amorphous silicon layer and the second amorphous silicon layer; forming silicon grains on a surface of the storage node; and doping the impurity to the storage node and the silicon grains until reaching a second predetermined concentration for providing conductivity required by the storage node.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile