The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Dec. 04, 2007
Yu-hsiang Huang, Taoyuan County, TW;
Shan-ming Lan, Taoyuan County, TW;
Tsun-neng Yang, Taipei, TW;
Chien-te Ku, Taoyuan County, TW;
Meng-chu Chen, Taichung, TW;
Zhen-yu LI, Chiayi County, TW;
Yu-Hsiang Huang, Taoyuan County, TW;
Shan-Ming Lan, Taoyuan County, TW;
Tsun-Neng Yang, Taipei, TW;
Chien-Te Ku, Taoyuan County, TW;
Meng-Chu Chen, Taichung, TW;
Zhen-Yu Li, Chiayi County, TW;
Atomic Energy Council, Taoyuan, TW;
Abstract
A method is disclosed for making a thin-film poly-crystalline silicon solar cell. In the method, there is provided an ITO-glass substrate by coating a glass substrate with a transparent and conductive ITO film. An amorphous silicon film is grown on the ITO-glass substrate. An aluminum film is grown on the amorphous silicon film. The aluminum film and the amorphous silicon film are annealed and therefore converted and interchanged into an aluminum-silicon alloy film and a ppoly-crystalline silicon film, respectively. In a low-temperature plasma-based deposition process, a ppoly-crystalline silicon film is coated on the ppoly-crystalline silicon film, and an npoly-crystalline silicon film is coated on the ppoly-crystalline silicon film. An ohmic contact is provided on the transparent and conductive ITO film. Other ohmic contacts are provided on the npoly-crystalline silicon film. An anti-reflection film is coated on the npoly-crystalline silicon film.