The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Feb. 01, 2005
Won Kyu Ha, Gyeongsangbuk-do, KR;
Hak Su Kim, Seoul, KR;
Jae DO Lee, Gyeongsangbuk-do, KR;
Ki Heon Kim, Gyeongsangbuk-do, KR;
Jung Min Seo, Daegu, KR;
Hyun Joung Kim, Daegu, KR;
Won Kyu Ha, Gyeongsangbuk-do, KR;
Hak Su Kim, Seoul, KR;
Jae Do Lee, Gyeongsangbuk-do, KR;
Ki Heon Kim, Gyeongsangbuk-do, KR;
Jung Min Seo, Daegu, KR;
Hyun Joung Kim, Daegu, KR;
LG Electronics Inc., Seoul, KR;
Abstract
There is disclosed an electro-luminescence display device that is adaptive for preventing picture quality deterioration by operating a thin film transistor for an electro-luminescence cell drive at a non-saturation area to compensate a threshold voltage, and a driving method thereof. An electro-luminescence display device according to an embodiment of the present invention includes an electro-luminescence cell connected between a first supply voltage source and a ground voltage source to emit light by a current supplied from the first supply voltage source; a cell driver formed every intersection of gate lines and data lines and connected between the first supply voltage source and the electro-luminescence cell to control a current flowing in the pixel cell; and a pulse supplier supplies to the electro-luminescence cell a pulse amplitude modulation signal which is divided to have N (N is a natural number) numbers of different voltage levels from each other, and wherein the driving thin film transistor operates at the non-saturation region.