The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
May. 20, 2005
Applicants:
Atsushi Ikeda, Shiga, JP;
Hideo Nakagawa, Shiga, JP;
Nobuo Aoi, Hyogo, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor device including: an insulating film () formed over a substrate (); a buried metal interconnect () formed in the insulating film (); and a barrier metal film (A) formed between the insulating film () and the metal interconnect (), the barrier metal film (A) includes a metal oxide film (), a metal compound film () and a metal film () stacked in this order from a side in which the insulating film () exists to a side in which the metal interconnect () exists. Elastic modulus of the metal compound film () is larger than that of the metal oxide film ().