The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
May. 09, 2008
Syotaro Ono, Kanagawa, JP;
Yoshihiro Yamaguchi, Saitama, JP;
Yusuke Kawaguchi, Kanagawa, JP;
Kazutoshi Nakamura, Kanagawa, JP;
Norio Yasuhara, Kanagawa, JP;
Kenichi Matsushita, Tokyo, JP;
Shinichi Hodama, Kanagawa, JP;
Akio Nakagawa, Kanagawa, JP;
Syotaro Ono, Kanagawa, JP;
Yoshihiro Yamaguchi, Saitama, JP;
Yusuke Kawaguchi, Kanagawa, JP;
Kazutoshi Nakamura, Kanagawa, JP;
Norio Yasuhara, Kanagawa, JP;
Kenichi Matsushita, Tokyo, JP;
Shinichi Hodama, Kanagawa, JP;
Akio Nakagawa, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes: a substrate, a surface portion thereof serving as a drain layer; a first main electrode connected to the drain layer; an epitaxial layer formed on the drain layer; a base layer formed on the epitaxial layer; a source layer formed in a base layer surface portion; an insulated trench sandwiched by base layers; a JFET layer formed on trench side walls; an LDD layer formed in a base layer surface portion and connected to the JFET layer around a top face of the trench; a control electrode formed on a gate insulating film formed on an LDD layer surface part, on surfaces of source layer end parts facing each other across the trench, and on a base layer region sandwiched by the LDD and source layers; and a second main electrode connected to the source and base layers sandwiching the control electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile