The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Nov. 14, 2007
Kazuhiro Kaibara, Osaka, JP;
Masahiro Hikita, Hyogo, JP;
Tetsuzo Ueda, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Tsuyoshi Tanaka, Osaka, JP;
Kazuhiro Kaibara, Osaka, JP;
Masahiro Hikita, Hyogo, JP;
Tetsuzo Ueda, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Tsuyoshi Tanaka, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A transistor includes: a first semiconductor layer and a second semiconductor layer with a first region and a second region, which are sequentially formed above a substrate; a first p-type semiconductor layer formed on a region of the second semiconductor layer other than the first and second regions; and a second p-type semiconductor layer formed on the first p-type semiconductor layer. The first p-type semiconductor layer is separated from a drain electrode by interposing therebetween a first groove having a bottom composed of the first region, and from a source electrode by interposing therebetween a second groove having a bottom composed of the second region.