The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2010

Filed:

Dec. 28, 2001
Applicants:

Hiroaki Tanaka, Tokyo, JP;

Akira Fujita, Tokyo, JP;

Shigeru Kimura, Tokyo, JP;

Akitoshi Maeda, Tokyo, JP;

Takasuke Hayase, Izumi, JP;

Inventors:

Hiroaki Tanaka, Tokyo, JP;

Akira Fujita, Tokyo, JP;

Shigeru Kimura, Tokyo, JP;

Akitoshi Maeda, Tokyo, JP;

Takasuke Hayase, Izumi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01);
U.S. Cl.
CPC ...
Abstract

An active matrix addressing LCD device having an active matrix substrate on which conductive lines are formed is provided, which suppress the AI hillock without complicating the structure of the lines and which decreases the electrical connection resistance increase at the terminals of the lines, thereby improving the connection reliability. The device comprises an active matrix substrate having a transparent, dielectric plate, thin-film transistors (TFTs) arranged on the plate, and pixel electrodes arranged on the plate. Gate electrodes of the TFTs and scan lines have a first multilevel conductive structure. Common electrodes and common lines may have the first multilevel conductive structure. Source and drain electrodes of the TFTs and signal lines may have a second multilevel conductive structures. Each of the first and second multilevel conductive structures includes a three-level TiN/Ti/Al or TiN/Al/Ti structure or a four-level TiN/Ti/AI/Ti structure. Each of the TiN film of the first and second structures has a nitrogen concentration of 25 atomic % or higher. The Al file may be replaced with an Al alloy.


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