The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Jul. 10, 2006
Applicants:
Masao Nakayama, Chino, JP;
Daisuke Kobayashi, Chino, JP;
Inventors:
Masao Nakayama, Chino, JP;
Daisuke Kobayashi, Chino, JP;
Assignee:
Seiko Epson Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a capacitor includes the steps of: forming a lower electrode above a base substrate; forming a dielectric film composed of ferroelectric material or piezoelectric material above the lower electrode; forming an upper electrode above the dielectric film; forming a silicon oxide film that covers at least the dielectric film and the upper electrode; and forming a hydrogen barrier film that covers the silicon oxide film.
Nakayama, Masao. (2010). Method of manufacturing a ferroelectric capacitor with a hydrogen barrier layer (U.S. Patent No. 7662724). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7662724
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile