The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Dec. 30, 2005
Cheon Man Shim, Seoul, KR;
Cheon Man Shim, Seoul, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method for forming a metal line of a semiconductor device uses a low dielectric constant material as an interlayer dielectric layer and treats a surface of the interlayer dielectric layer with plasma to prevent moisture and ammonia from being adsorbed in the low dielectric constant material. The method for forming a metal line of a semiconductor device includes forming a lower metal line layer on a semiconductor substrate, sequentially forming an etch stop layer and an interlayer dielectric layer on an entire surface including the lower metal line layer, forming a plasma layer by treating a surface of the interlayer dielectric layer with plasma, forming a photoresist pattern on the plasma layer, forming a via hole using the photoresist pattern as a mask to open the lower metal line layer, and forming a via contact by burying a metal material in the via hole.