The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7662702 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 16, 2010

Filed:

Jun. 07, 2005
Applicants:

Dries Els Victor Van Gestel, Vosselaar, BE;

Guy Beaucarne, Oud-Heverlee, BE;

Inventors:

Dries Els Victor Van Gestel, Vosselaar, BE;

Guy Beaucarne, Oud-Heverlee, BE;

Assignee:

IMEC, Leuven, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a crystalline silicon layer on a microrough face of a substrate by reducing the microroughness of the face and then performing a metal induced crystallization process on the face is disclosed.


Find Patent Forward Citations

Van Gestel, Dries Els Victor. (2010). Method for manufacturing a crystalline silicon layer (U.S. Patent No. 7662702). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7662702

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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