The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Jun. 23, 2006
Wenxu Xianyu, Suwon-si, KR;
Hans S. Cho, Seoul, KR;
Takashi Noguchi, Yongin-si, KR;
Young-soo Park, Suwon-si, KR;
Xiaoxin Zhang, Yongin-si, KR;
Huaxiang Yin, Yongin-si, KR;
Hyuck Lim, Seoul, KR;
Kyung-bae Park, Seoul, KR;
Suk-pil Kim, Yongin-si, KR;
Wenxu Xianyu, Suwon-si, KR;
Hans S. Cho, Seoul, KR;
Takashi Noguchi, Yongin-si, KR;
Young-Soo Park, Suwon-si, KR;
Xiaoxin Zhang, Yongin-si, KR;
Huaxiang Yin, Yongin-si, KR;
Hyuck Lim, Seoul, KR;
Kyung-Bae Park, Seoul, KR;
Suk-Pil Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-AlOlayer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-AlOlayer. The method may be used to manufacture a semiconductor device having higher carrier mobility.