The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Jun. 18, 2003
Alix Hélène Gicquel, Paris, FR;
François Silva, Enghien, FR;
Xavier Duten, Paris, FR;
Khaled Hassouni, Le Kremlin-Bicetre, FR;
Guillaume Vincent Lombardi, Rosny sur Seine, FR;
Antoine Rousseau, Paris, FR;
Alix Hélène Gicquel, Paris, FR;
François Silva, Enghien, FR;
Xavier Duten, Paris, FR;
Khaled Hassouni, Le Kremlin-Bicetre, FR;
Guillaume Vincent Lombardi, Rosny sur Seine, FR;
Antoine Rousseau, Paris, FR;
Centre National de la Recherche Scientifique - CNRS, Paris, FR;
Universite Paris Nord (Paris XII) Institut Galilee, Villettaneuse, FR;
Abstract
Disclosed is a method for manufacturing a diamond film of electronic quality at a high rate using a pulsed microwave plasma. The plasma that has a finite volume is formed near a substrate (in a vacuum chamber) by subjecting a gas containing at least hydrogen and carbon to a pulsed discharge. The pulsed discharge has a succession of low-power states and of high-power states and a peak absorbed power P, in order to obtain carbon-containing radicals in the plasma. These carbon-containing radicals are deposited on the substrate in order to form a diamond film. Power is injected into the volume of the plasma with a peak power density of at least 100 W/cm, while maintaining the substrate to a substrate temperature of between 700° C. and 1000 ° C.