The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Apr. 04, 2006
Kenji Toda, Niigata, JP;
Mineo Sato, Niigata, JP;
Kazuyoshi Uematsu, Niigata, JP;
Shinichiro Kousaka, Niigata, JP;
Yoshitaka Kawakami, Niigata, JP;
Kenji Toda, Niigata, JP;
Mineo Sato, Niigata, JP;
Kazuyoshi Uematsu, Niigata, JP;
Shinichiro Kousaka, Niigata, JP;
Yoshitaka Kawakami, Niigata, JP;
Niigata University, Niigata, JP;
Abstract
A novel fluorescent substance for a light-emitting diode, emitting light of any one of three primary colors by excitation of an ultraviolet light-emitting diode. Alternatively, a novel fluorescent substance for a light-emitting diode, emitting light in a red region of a spectrum by excitation of a blue light-emitting diode. NaSrSiOis doped with Eu. Preferably, Euis added so as to account for 1 to 80 mol % in concentration in a host crystal, while sites of Siin NaSrSiO. are replaced by Aland/or Ga. Alternatively, CaSiOis doped with Ceand Tb. Preferably, Ceand Tbare added so as to account for 0.1 to 80 mol % and 0.1 to 20 mol % in concentration in a host crystal, respectively. Still alternatively, CaSiOis doped with Eu. Preferably, Euis added so as to account for 0.5 to 10 mol % in concentration in the host crystal.