The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2010
Filed:
Nov. 24, 2005
Hans M. B. Boeve, Hechtel-Eksel, BE;
Karen Attenborough, Hechtel-Eksel, BE;
Godefridus A. M. Hurkx, Best, NL;
Prabhat Agarwal, Brussels, BE;
Hendrik G. A. Huizing, Neerkant, NL;
Michael A. A. In't Zandt, Veldhoven, NL;
Jan W. Slotboom, Eersel, NL;
Hans M. B. Boeve, Hechtel-Eksel, BE;
Karen Attenborough, Hechtel-Eksel, BE;
Godefridus A. M. Hurkx, Best, NL;
Prabhat Agarwal, Brussels, BE;
Hendrik G. A. Huizing, Neerkant, NL;
Michael A. A. In'T Zandt, Veldhoven, NL;
Jan W. Slotboom, Eersel, NL;
NXP B.V., Eindhoven, NL;
Abstract
A thermally programmable memory has a programmable element () of a thermally programmable resistance preferably of phase change material, material and a blown antifuse () located adjacent to the programmable material. Such a blown antifuse has a dielectric layer () surrounded by conductive layers () to enable a brief high voltage to be applied across the dielectric to blow a small hole in the dielectric during manufacture to form a small conductive path which can be used as a tiny electrical heater for programming the material. Due to the current confinement by the hole, the volume of the material that must be heated in order to switch to a highly-resistive state is very small. As a result the programming power can be low.