The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2010

Filed:

Nov. 15, 2006
Applicants:

Richard Lee Donze, Rochester, MN (US);

Karl Robert Erickson, Rochester, MN (US);

William Paul Hovis, Rochester, MN (US);

John Edward Sheet, Ii, Zumbrota, MN (US);

Jon Robert Tetzloff, Rochester, MN (US);

Inventors:

Richard Lee Donze, Rochester, MN (US);

Karl Robert Erickson, Rochester, MN (US);

William Paul Hovis, Rochester, MN (US);

John Edward Sheet, II, Zumbrota, MN (US);

Jon Robert Tetzloff, Rochester, MN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01); H01L 23/58 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

An apparatus for measuring a structural characteristic between a polysilicon shape and a silicon area. The apparatus for measuring a structural characteristic between a polysilicon shape and a silicon area comprises the silicon area, and a plurality of polysilicon shapes each having a unique orientation relative to the silicon area wherein each of the polysilicon shapes is formed having an angle less than or equal to a critical angle. The critical angle is an angle at or below which a sidewall spacer no longer is formed on a polysilicon shape, thereby causing the polysilicon shape to short circuit to an underlying portion of the silicon area by way of a silicide bridge.


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