The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2010
Filed:
Nov. 01, 2007
Kikuo Okada, Saitama, JP;
Kojiro Kameyama, Gunma, JP;
Kikuo Okada, Saitama, JP;
Kojiro Kameyama, Gunma, JP;
Sanyo Electric Co., Ltd., Moriguchi-shi, JP;
Sanyo Semiconductor Co., Ltd., Gunma, JP;
Abstract
A punch-through type IGBT generally has a thick p-type collector layer. Therefore, the FWD need be externally attached to the IGBT when the IGBT is used as a switching element in an inverter circuit for driving a motor load, and thus the number of processes and components increases. In the invention, trenches are formed penetrating through a collector layer and reaching a buffer layer. A collector electrode is formed in the trenches, too. With this structure, a current path is formed between an emitter electrode and the collector electrode without through the collector layer and functions as the FWD.