The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2010
Filed:
Apr. 28, 2006
Applicant:
Yoshihiro Tsukuda, Fujiidera, JP;
Inventor:
Yoshihiro Tsukuda, Fujiidera, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A polycrystalline silicon plate has grain boundary lines on a surface thereof, and at least one of the grain boundary lines is a quasi-linear grain boundary line (). The silicon plate is used to produce a solar cell. The silicon plate is formed using a base substrate having an irregular surface provided with dotted or linear protrusions, which makes it possible to control the grain boundary lines. As such, an inexpensive and high-quality silicon plate can be provided. Further, by employing this silicon plate to produce a solar cell, an inexpensive and high-quality solar cell can be provided as well.