The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2010

Filed:

Mar. 22, 2004
Applicants:

Masato Tsuchiya, Gunma, JP;

Syunichi Ogasawara, Gunma, JP;

Inventors:

Masato Tsuchiya, Gunma, JP;

Syunichi Ogasawara, Gunma, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a process control method in spin etching capable of realizing uniformity in etching amount in etching treatment for even wafers each having various conditions, and achieving uniformity of thickness values among etched wafers. In the present invention, weight of a wafer before etching is measured in units of 1/1000 g, followed by predetermined etching treatment in a spin etching section. Thereafter, weight of the wafer is again measured in units of 1/1000 g after rinsing and drying treatment of the wafer, and then an actual etching amount is calculated from a difference between weight before and after etching of the wafer, confirming an etching rate each time etching to thereby control an etching time.


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Tsuchiya, Masato. (2010). Process control method in spin etching and spin etching apparatus (U.S. Patent No. 7659212). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7659212

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