The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2010
Filed:
Aug. 10, 2005
Radu Surdeanu, Roosbeek, BE;
Erwin Hijzen, Blanden, BE;
Michael Antoine Zandt, Veldhoven, NL;
Raymond Josephus Hueting, Hengelo, NL;
Radu Surdeanu, Roosbeek, BE;
Erwin Hijzen, Blanden, BE;
Michael Antoine Zandt, Veldhoven, NL;
Raymond Josephus Hueting, Hengelo, NL;
NXP B.V., Eindhoven, NL;
Abstract
There is a method of manufacturing a semiconductor device with a dual gate field effect transistor, the method including a semiconductor body a semiconductor material having a surface with a source region and a drain region of a first conductivity type and with a channel region of a second conductivity type opposite to the first conductivity type between the source region and the drain region and with a first gate region separated from the surface of the semiconductor body by a first gate dielectric above the channel region and with a second gate region situated opposite to the first gate region and formed within a recess in an opposite surface of the semiconductor body so as to be separated from the channel region by a second gate dielectric wherein the recess is formed with a local change of the doping of the channel region and by etching starting from the opposite surface of the semiconductor body.