The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2010

Filed:

Dec. 26, 2006
Applicants:

Yasushi Nagata, Tokyo, JP;

Kazuya Tsukada, Kanagawa, JP;

Hideki Hoshino, Tokyo, JP;

Inventors:

Yasushi Nagata, Tokyo, JP;

Kazuya Tsukada, Kanagawa, JP;

Hideki Hoshino, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 53/00 (2006.01); B22F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A production method of nano-sized silicon crystal particles comprising the step of allowing monosilane to be oxidized in a bulk liquid phase to form the nano-sized silicon crystal particles within the bulk liquid phase, wherein a liquid of the bulk liquid phase is an unsaturated hydrocarbon free from an oxidizing gas; and isolating the nano-sized silicon crystal particles from the bulk liquid phase.


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