The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Oct. 17, 2007
Darlene Hamilton, White Salmon, WA (US);
Fatima Bathul, Santa Clara, CA (US);
Kulachet Tanpairoj, Stanford, CA (US);
Ou LI, Fremont, CA (US);
Darlene Hamilton, White Salmon, WA (US);
Fatima Bathul, Santa Clara, CA (US);
Kulachet Tanpairoj, Stanford, CA (US);
Ou Li, Fremont, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Methods of rapidly programming a wordline of multi-level flash memory cells comprising memory cell element-pairs having three or more data levels per bit or element corresponding to three or more threshold voltages are provided. An interactive program algorithm rapidly programs the elements of the wordline of memory cells in a learn phase and a single core programming phase. In one embodiment, each wordline comprises learn element-pairs first programmed to provide learn drain voltages for programming core element-pairs along the wordline having the same program pattern of data levels. A set comprising one or more program patterns is chosen to correspond with each program level used on the wordline. The learn element-pairs are programmed to determine a learned program drain voltage for each program level. This learned program drain voltage essentially provides a wordline and program level specific program characterization of the Vd required for the remaining elements of that wordline.