The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2010

Filed:

Sep. 18, 2007
Applicants:

Tomohiro Murata, Osaka, JP;

Hiroaki Ueno, Osaka, JP;

Hidetoshi Ishida, Osaka, JP;

Tetsuzo Ueda, Osaka, JP;

Yasuhiro Uemoto, Shiga, JP;

Tsuyoshi Tanaka, Osaka, JP;

Daisuke Ueda, Osaka, JP;

Inventors:

Tomohiro Murata, Osaka, JP;

Hiroaki Ueno, Osaka, JP;

Hidetoshi Ishida, Osaka, JP;

Tetsuzo Ueda, Osaka, JP;

Yasuhiro Uemoto, Shiga, JP;

Tsuyoshi Tanaka, Osaka, JP;

Daisuke Ueda, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.


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