The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
May. 12, 2006
Jae Kyeong Jeong, Yongin, KR;
Jae Bon Koo, Yongin, KR;
Hyun Soo Shin, Yongin, KR;
Yeon Gon MO, Yongin, KR;
Jae Kyeong Jeong, Yongin, KR;
Jae Bon Koo, Yongin, KR;
Hyun Soo Shin, Yongin, KR;
Yeon Gon Mo, Yongin, KR;
Samsung Mobile Display Co., Ltd., Yongin, KR;
Abstract
A thin film transistor and a method for manufacturing the same capable of reducing a change in a threshold voltage of the thin film transistor formed on a flexible substrate. The thin film transistor includes: a substrate, the substrate being flexible; a buffer layer having a low dielectric constant from about 1.2 to about 4.0 and formed on the substrate; a semiconductor layer formed on the buffer layer; a gate electrode; first insulation layer formed between the gate electrode and the semiconductor layer; a second insulation layer formed on the semiconductor layer and the gate electrode; and a source/drain electrode electrically connected to the semiconductor layer through a contact hole formed in the second insulation layer. Therefore, the thin film transistor can reduce a change in its threshold voltage, thereby reducing changes in brightness, gray scale, contrast, etc., of light-emitting devices using the thin film transistor.