The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Aug. 21, 2007
Shirou Ozaki, Kawasaki, JP;
Yoshihiro Nakata, Kawasaki, JP;
Ei Yano, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
In a method for manufacturing a semiconductor device, including forming an insulator film including a material having Si—CHbond and Si—OH bond, and irradiating the insulator film with ultraviolet rays, the rate of decrease of C concentration by X-ray photoelectron spectroscopy is not more than 30%, and the rate of decrease of one or more bonds selected from the group consisting of C—H bond, O—H bond and Si—O bond of Si—OH is not less than 10%, as a result of ultraviolet ray irradiation. A low-dielectric-constant insulator film that has a high film strength and can prevent increase of dielectric constant due to moisture absorption, a semiconductor device that can prevent device response speed delay and reliability decrease due to parasite capacity increase, and a manufacturing method therefor are provided.