The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Dec. 12, 2006
Applicant:
Jong Bok Lee, Incheon, KR;
Inventor:
Jong Bok Lee, Incheon, KR;
Assignee:
Dongbu HiTek Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
Embodiments relate to a semiconductor device and a method for manufacturing a semiconductor device. In embodiments, a transistor including the gate electrode and a source/drain may be formed between isolation layers and a contact may be connected to the source/drain. A barrier layer may be formed at a boundary between the isolation layer and the source/drain and may physically isolate the isolation layer from the source/drain.
Lee, Jong. (2010). Method for manufacturing isolation layer having barrier layer formed thereon (U.S. Patent No. 7655524). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7655524
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile