The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Jul. 14, 2005
David D. Wen, Los Altos, CA (US);
Xinqiao Liu, San Jose, CA (US);
Ahn N. VU, Saratoga, CA (US);
Steven Kiyoshi Onishi, San Jose, CA (US);
David D. Wen, Los Altos, CA (US);
Xinqiao Liu, San Jose, CA (US);
Ahn N. Vu, Saratoga, CA (US);
Steven Kiyoshi Onishi, San Jose, CA (US);
Fairchild Imaging, Inc, Milpitas, CA (US);
Abstract
A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.