The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Oct. 07, 2008
Yasuhiro Fujimoto, Okayama, JP;
Tougo Nakatani, Hyogo, JP;
Toru Takayama, Hyogo, JP;
Isao Kidoguchi, Hyogo, JP;
Yasuhiro Fujimoto, Okayama, JP;
Tougo Nakatani, Hyogo, JP;
Toru Takayama, Hyogo, JP;
Isao Kidoguchi, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer made of p-type AlGaInP in the infrared laser portion have a ridge stripe portion having a light emitting point. A current block layer made of SiNis formed on both sides of each ridge stripe portion, and a strain relaxing layer made of ZrOis selectively formed on an outer side of each ridge stripe region on the current block layer. Provided that Tc is a thermal expansion coefficient of the p-type cladding layers, Tb is a thermal expansion coefficient of the current block layer, and Ts is a thermal expansion coefficient of the strain relaxing layer, the relation of Tb<Tc<Ts is satisfied.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile