The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2010

Filed:

Jul. 01, 2008
Applicants:

Tsutomu Yamaguchi, Tokyo, JP;

Yoshihisa Tashiro, Tokyo, JP;

Kenzo Mori, Tokyo, JP;

Hiroo Sakamoto, Tokyo, JP;

Takehiro Nishida, Tokyo, JP;

Inventors:

Tsutomu Yamaguchi, Tokyo, JP;

Yoshihisa Tashiro, Tokyo, JP;

Kenzo Mori, Tokyo, JP;

Hiroo Sakamoto, Tokyo, JP;

Takehiro Nishida, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/00 (2006.01); H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor laser chip is joined to an AlN sub-mount in a junction-down manner. The sub-mount is joined to a package. The AlN sub-mount is joined to a stem. The direction perpendicular to the irradiation direction of a laser beam emitted from the semiconductor laser chip is the direction of the width of the sub-mount. The thickness and the width of the AlN sub-mount are determined so that the product of the equivalent stress applied to the center of the surface of the semiconductor laser chip joined to the sub-mount and the stress in the direction of the width of the sub-mount does not exceed 70% of the maximum value of the product obtained by changing the thickness and the width of the AlN sub-mount.


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