The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Jun. 15, 2006
Yun-sung Lee, Gyeonggi-do, KR;
Yun-Sung Lee, Gyeonggi-do, KR;
Abstract
In a device isolation layer for a p-MOS transistor and a method of forming the same, a trench oxide layer having a first and a second sub-oxide layers is formed in a trench including a first and a second sub-trenches. The first and second sub-oxide layers are formed on side and bottom surfaces of the first and second sub-trenches, respectively. The second sub-trench has a width greater than the first sub-trench. The first sub-oxide layer has a first thickness that is uniform along the side and bottom surfaces of the first sub-trench and the second sub-oxide layer has a second thickness greater than the first thickness along the side surface of the second sub-trench. A liner layer is formed on the trench oxide layer, and an insulation pattern is formed on the liner layer.