The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Aug. 10, 2007
Akio Kaneko, Kawasaki, JP;
Kazuhiro Eguchi, Chigasaki, JP;
Seiji Inumiya, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Motoyuki Sato, Yokohama, JP;
Akio Kaneko, Kawasaki, JP;
Kazuhiro Eguchi, Chigasaki, JP;
Seiji Inumiya, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Motoyuki Sato, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiOfilm, a film containing SiOas a main component and at least one of Hf and Zr, a film containing SiOas a main component and N, a film containing SiOas a main component, Hf and N, a film containing SiOas a main component, Zr and N, or a film containing SiOas a main component, Hf, Zr and N.