The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Apr. 21, 2004
Radjindrepersad Gajadharsing, Nijmegen, NL;
Thomas Christian Roedle, Nijmegen, NL;
Petra Christina Anna Hammes, Nijmegen, NL;
Stephan JO Cecile Henri Theeuwen, Nijmegen, NL;
Radjindrepersad Gajadharsing, Nijmegen, NL;
Thomas Christian Roedle, Nijmegen, NL;
Petra Christina Anna Hammes, Nijmegen, NL;
Stephan Jo Cecile Henri Theeuwen, Nijmegen, NL;
DSP Group Switzerland AG, Zurich, CH;
Abstract
The invention relates to in particular a lateral DMOST with a drain extension (). In the known transistor a further metal strip () is positioned between the gate electrode contact strip and the drain contact () which is electrically connected with the source region contact (). In the device proposed here, the connection between the further metal strip () and the source contact () comprises a capacitor () and the further metal strip () is provided with a further contact region () for delivering a voltage to the further metal strip (). In this way an improved linearity is possible and the usefulness of the device is improved in particular at high power and at high frequencies. Preferably the capacitor () is integrated with the transistor in a single semiconductor body (). The invention further comprises a method of operating a device () according to the invention.