The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Aug. 25, 2006
Takeyoshi Sugaya, Tsukuba, JP;
Kazuhiro Komori, Tsukuba, JP;
Takeyoshi Sugaya, Tsukuba, JP;
Kazuhiro Komori, Tsukuba, JP;
Japan Science and Technology Agency, Saitama, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Abstract
There is provided a 3-terminal negative differential resistance field effect element having a high output and high frequency characteristic, requiring low power consumption, and preferably having a high PVCR. The field effect element uses a compound hetero structure and forms a dual channel layer by connecting a high-transfer degree quantum well layer () to a low-transfer degree quantum dot layer () via a barrier layer () on a substrate (). Under existence of an electric field obtained by voltage application to a gate electrode (), the negative resistance field effect element () changes a carrier accelerated by a drain voltage applied to a drain electrode () from a high-transfer degree channel to a low-transfer degree channel by the tunnel effect or over the barrier layer, thereby exhibiting negative differential resistance for the drain current and changing the negative resistance inclination by the gate voltage.