The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Sep. 07, 2006
Shuichi Kikuchi, Gunma, JP;
Kiyofumi Nakaya, Saitama, JP;
Shigeaki Okawa, Tochigi, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
In a semiconductor device of the present invention, a MOS transistor is disposed in an elliptical shape. Linear regions in the elliptical shape are respectively used as the active regions, and round regions in the elliptical shape is used respectively as the inactive regions. In each of the inactive regions, a P type diffusion layer is formed to coincide with a round shape. Another P type diffusion layer is formed in a part of one of the inactive regions. These P type diffusion layers are formed as floating diffusion layers, are capacitively coupled to a metal layer on an insulating layer, and assume a state where predetermined potentials are respectively applied thereto. This structure makes it possible to maintain current performance of the active regions, while improving the withstand voltage characteristics in the inactive regions.