The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2010

Filed:

Apr. 19, 2005
Applicants:

Tzong-liang Tsai, Hsinchu, TW;

Way-jze Wen, Hsinchu, TW;

Chang-han Chiang, Hsinchu, TW;

Chih-sung Chang, Hsinchu, TW;

Inventors:

Tzong-Liang Tsai, Hsinchu, TW;

Way-Jze Wen, Hsinchu, TW;

Chang-Han Chiang, Hsinchu, TW;

Chih-Sung Chang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light emitting diode and the method of the same are provided. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An ohmic contact layer and a reflective layer are formed sequentially, and then are etched to expose the transparent dielectric material. Finally, forming an adhesive conductive complex layer to fix the ohmic contact layer and the reflective layer on the light emitting diode epitaxy structure.


Find Patent Forward Citations

Tsai, Tzong-Liang. (2010). Method of making light emitting diode (U.S. Patent No. 7652302). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7652302

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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