The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Nov. 30, 2007
Taketo Matsuda, Kanagawa, JP;
Taketo Matsuda, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method for fabricating a semiconductor device, includes forming a silicon nitride film on a base body, forming a silicon film on said silicon nitride film, forming at least one groove extending from said silicon film to inside of said base body, forming by high-density plasma-enhanced chemical vapor deposition a silicon-containing dielectric film in said groove and on said silicon film in such a way that a silicon-rich layer is formed at a height position spaced apart from said base body within said groove, said silicon-rich layer being higher in silicon content than remaining silicon-containing dielectric film, removing by etching a portion of said silicon-containing dielectric film above said silicon film and a portion of said remaining silicon-containing dielectric film above said silicon-rich layer, if any, and after having removed said silicon-containing dielectric film, removing by etching said silicon-rich layer and said silicon film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile