The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Oct. 12, 2007
Shoichi Miyazaki, Mie, JP;
Shoichi Miyazaki, Mie, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate having a plurality of element regions and a plurality of element isolation regions in a first direction, a plurality of floating gate electrodes formed via a gate insulating film on the respective element regions, an intergate insulating film formed on the floating gate electrodes, a plurality of control gate electrodes formed on the intergate insulating film so as to extend over the adjacent floating gate electrodes, and an element isolation insulating film formed in the element isolation region and having an upper end located higher than the upper surface of the gate insulating film, the element isolation insulating film including a part formed between the control gate electrodes so that the central sidewall of the element isolation insulating film is located lower than the end of the sidewall of the element isolation insulating film.