The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Dec. 26, 2007
Jun-hee Cho, Kyoungki-do, KR;
Jun-Hee Cho, Kyoungki-do, KR;
Hynix Semiconductor Inc., , KR;
Abstract
A method for fabricating a semiconductor device, the method includes forming an etch stop layer and an insulation layer over a substrate having a first region and a second region, selectively removing the insulation layer and the etch stop layer in the first region to expose parts of the substrate, thereby forming at least two electrode regions on the exposed substrate and a resultant structure, forming a conductive layer over the resultant structure, removing the conductive layer in the second region, removing the insulation layer in the first region and the second region by using wet chemicals, and removing parts of the conductive layer, which formed between the at least two electrode regions in the first region, to form cylinder type electrodes in the first region.