The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
May. 10, 2007
Toshiki Ito, Kawasaki, JP;
Takako Yamaguchi, Kawasaki, JP;
Toshiki Ito, Kawasaki, JP;
Takako Yamaguchi, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A process for forming a resist pattern comprises the steps of applying on a substrate to form a photosensitive resist layer a photosensitive composition comprising at least one photosensitive compound having, in the molecule, two or more structural units represented by CR—CHR—ORor CR—CHR—COORwhere Ris a hydrogen atom or an alkyl group, at least one of R, R, R, R, and Ris a nitro group, and others are selected from the group consisting of a hydrogen atom, a halogen atom, an alkyl, an alkoxy, a phenyl, a naphthyl, and an alkyl in which a part or the entire of hydrogen atoms are substituted by a fluorine atom, and Ris a substituted or unsubstituted phenylene or naphthylene group dissolved in an organic solvent, irradiating the resist layer selectively with a radiation ray, and developing a portion irradiated by the ray to form a pattern of the resist layer.