The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2010

Filed:

Jul. 12, 2004
Applicants:

Franz Auerbach, Soest, DE;

Karl Weidner, München, DE;

Inventors:

Franz Auerbach, Soest, DE;

Karl Weidner, München, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electrical component is placed on a substrate. At least one film comprising a plastic material is connected to the component and to the substrate in such a way that a surface contour defined by the component and the substrate is represent is represented in a surface contour of the part of the film. Said film is laminated onto the component and the substrate in such a way that the film follows the topology of the arrangement consisting of the component and the substrate. Said film is in contact with the component and the substrate in a positive and non-positive manner, and comprises a composite material containing a filler that is different to the plastic material. The processability and electrical properties of the film are influenced by the filler or the composite material obtained thereby. In this way, other functions can be integrated into the film. Said component is, for example, a power semiconductor component. An electrically insulating and thermoconductive film is used, for example. A contact surface of the power semiconductor is electrically contracted through the film. The thermal conductivity of the film enables heat created during the operation of the power semiconductor component to be efficiently carried away.


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