The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Dec. 21, 2007
Haruki Yoneda, Ogaki, JP;
Haruki Yoneda, Ogaki, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
This semiconductor device includes a first conductivity type first semiconductor layer formed on the upper surface of a substrate, a first conductivity type second semiconductor layer formed on the first semiconductor layer, a first conductivity type third semiconductor layer formed on the second semiconductor layer, a second conductivity type fourth semiconductor layer formed on the third semiconductor layer, a first conductivity type fifth semiconductor layer formed on the fourth semiconductor layer and an electrode formed in a trench, so provided as to reach the second semiconductor layer through at least the fifth semiconductor layer, the fourth semiconductor layer and the third semiconductor layer, in contact with an insulating film, while the upper surface of the second semiconductor layer is arranged upward beyond the lower end of the electrode.