The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Dec. 29, 2006
Jianqiang HU, Shanghai, CN;
Zhixian Rui, Shanghai, CN;
Yanli Zhao, Shanghai, CN;
Yanjun Wang, Shanghai, CN;
Ming LI, Shanghai, CN;
Min Pan, Shanghai, CN;
Jianqiang Hu, Shanghai, CN;
Zhixian Rui, Shanghai, CN;
Yanli Zhao, Shanghai, CN;
Yanjun Wang, Shanghai, CN;
Ming Li, Shanghai, CN;
Min Pan, Shanghai, CN;
Abstract
A method for preparing TEM sample, comprising the following steps: providing a sample with two pits and a failure region between the two pits, the failure region comprising a semiconductor device; milling the first surface of the failure region, till the cross section of the semiconductor device is exposed; etching the first surface of the failure region; cleaning the sample; milling the second surface of the failure region, till the failure region can be passed by electron beam. A sample can be prepared for a high resolution TEM through above steps. When the sample is observed, it is easy to distinguish the lightly doped drain, source/drain regions from the silicon substrate and observe the pattern and defects in the lightly doped drain, source/drain regions clearly; in addition, it is easy to distinguish the BPSG from the non-doped silicon dioxide in the failure region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile