The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2010

Filed:

Mar. 21, 2008
Applicants:

Yorito Sakano, Chigasaki, JP;

Sanae Nishida, Suwa, JP;

Kazunobu Kuwazawa, Sakata, JP;

Tetsuo Tatsuda, Ina, JP;

Inventors:

Yorito Sakano, Chigasaki, JP;

Sanae Nishida, Suwa, JP;

Kazunobu Kuwazawa, Sakata, JP;

Tetsuo Tatsuda, Ina, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/335 (2006.01);
U.S. Cl.
CPC ...
Abstract

An apparatus including: a photodiode including: a first conductivity substrate; a second conductivity PD-well on the substrate's first surface side; and a first conductivity collection well inside the PD-well; a modulation transistor including: a second conductivity TR-well connected with the PD-well, and a junction depth shallower than that of the PD-well; a first conductivity modulation well inside the TR-well, and connected with the collection well; a second conductivity source inside the modulation well, and including a region contacting the first surface; a gate electrode in a region partially covering the modulation well and enclosing the source; a gate insulation layer between the gate and the first surface; and a second conductivity drain partially sandwiching the gate and opposing the source, and including a region contacting the first surface; and a transfer transistor connected to modulation transistors in pixels between the source and a connected source line.


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