The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Dec. 24, 2007
Applicants:
Eun-shil Park, Kyeongki-do, KR;
Kwon Hong, Kyeongki-do, KR;
Jae Hong Kim, Kyeongki-Do, KR;
Jae Hyoung Koo, Seoul, KR;
Inventors:
Eun-Shil Park, Kyeongki-do, KR;
Kwon Hong, Kyeongki-do, KR;
Jae Hong Kim, Kyeongki-Do, KR;
Jae Hyoung Koo, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a flash memory device is disclosed. The method comprises forming a first insulating layer on a semiconductor substrate; accumulating nitrogen at an interface between the semiconductor substrate and the first insulating layer to form a second insulating layer at the interface; and implanting oxygen into the second insulating layer to convert the second insulating layer to a third insulating layer.