The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Nov. 01, 2007
Jae Hoon Lee, Kyungki-Do, KR;
IN Eung Kim, Kyungki-Do, KR;
Yong Chun Kim, Kyungki-Do, KR;
Hyun Kyung Kim, Kyungki-Do, KR;
Moon Heon Kong, Kyungki-Do, KR;
Jae Hoon Lee, Kyungki-Do, KR;
In Eung Kim, Kyungki-Do, KR;
Yong Chun Kim, Kyungki-Do, KR;
Hyun Kyung Kim, Kyungki-Do, KR;
Moon Heon Kong, Kyungki-Do, KR;
Samsung Electro-Mechanics Co., Ltd., Suwon, Kyungki-Do, KR;
Abstract
A flip chip-type nitride semiconductor light emitting diode includes a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.