The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Aug. 11, 2008
David T. Chang, Calabasas, CA (US);
Randall L. Kubena, Oak Park, CA (US);
Frederic P. Stratton, Beverly Hills, CA (US);
Pamela R. Patterson, Los Angeles, CA (US);
David T. Chang, Calabasas, CA (US);
Randall L. Kubena, Oak Park, CA (US);
Frederic P. Stratton, Beverly Hills, CA (US);
Pamela R. Patterson, Los Angeles, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.