The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Mar. 27, 2008
Shinichiro Kataoka, Osaka, JP;
Takehiro Yano, Osaka, JP;
Shinichiro Kataoka, Osaka, JP;
Takehiro Yano, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes a phase compensation circuitusing a MOS capacitor with a structure in which an insulating film is disposed between a gate electrode formed on a semiconductor substrate and a diffusion layer. The phase compensation circuit includes first and second MOS capacitors. A gate electrode terminal of the first MOS capacitor is connected equivalently to a diffusion layer terminal of the second MOS capacitor that is a terminal opposite to the gate electrode terminal. A potential difference generating elementthat generates a potential difference by allowing a current to flow therethrough is connected between a diffusion layer terminal of the first MOS capacitor and a gate electrode terminal of the second MOS capacitor. When the MOS capacitors having the voltage dependence are used, e.g., as a phase compensation circuit element of an operational amplifier, the MOS capacitance is not reduced, no matter the range of the input or output voltage of the operational amplifier, so that the phase margin will not reduced.