The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2010

Filed:

Jan. 05, 2007
Applicants:

Zhibin Cheng, Cary, NC (US);

Robert G. Gerowitz, Raleigh, NC (US);

Claudia M. Tartevet, Raleigh, NC (US);

Inventors:

Zhibin Cheng, Cary, NC (US);

Robert G. Gerowitz, Raleigh, NC (US);

Claudia M. Tartevet, Raleigh, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/00 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of preventing current leakage in logic circuits within level sensitive scan design (LSSD) latch circuits in an application specific integrated circuit (ASIC). When the ASIC is in a manufacturing test mode, a gating signal at an input terminal of a power gating circuit is set to exceed a threshold voltage of transistors within the power gating circuit. The gating signal thus causes the power gating circuit to enable electrical current to reach the LSSD latch circuits. When the ASIC is in a normal functional mode, the gating signal is set below the threshold voltage. The gating signal thus causes the power gating circuit to prevent electrical current from reaching particular logic circuits (e.g., scan logic) within the LSSD latch circuits, thereby conserving power within the ASIC by preventing current leakage and heat generation in the LSSD latch circuit.


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