The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Oct. 04, 2006
Naoki Kotani, Hyogo, JP;
Gen Okazaki, Hyogo, JP;
Shinji Takeoka, Osaka, JP;
Junji Hirase, Osaka, JP;
Akio Sebe, Osaka, JP;
Kazuhiko Aida, Chiba, JP;
Naoki Kotani, Hyogo, JP;
Gen Okazaki, Hyogo, JP;
Shinji Takeoka, Osaka, JP;
Junji Hirase, Osaka, JP;
Akio Sebe, Osaka, JP;
Kazuhiko Aida, Chiba, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes: an isolation region formed in a semiconductor substrate; an active region surrounded by the isolation region in the semiconductor substrate; a gate insulating film formed on the active region; and a gate electrode formed across the boundary between the active region and the isolation region adjacent to the active region. The gate electrode includes a first portion which is located above the active region with the gate insulating film interposed therebetween and is entirely made of a silicide in a thickness direction and a second portion which is located above the isolation region and is made of a silicon region and the silicide region covering the silicon region.